IS62WV51216ALL 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62WV51216ALL

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV51216ALL, IS62WV51216BLL

CAPACITANCE(1)

Symbol Parameter

Conditions

Max.

CIN

Input Capacitance

VIN = 0V

8

COUT

Input/Output Capacitance

VOUT = 0V

10

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

Unit

pF

pF

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

62WV51216ALL

(Unit)

0.4V to VDD-0.2

5 ns

VREF

See Figures 1 and 2

62WV51216BLL

(Unit)

0.4V to VDD-0.3V

5ns

VREF

See Figures 1 and 2

ISSI ®

R1(Ω)

R2(Ω)

VREF

VTM

62WV51216ALL

(1.65V - 2.2V)

3070

3150

0.9V

1.8V

62WV51216BLL

(2.5V - 3.6V)

1029

1728

1.5V

2.8V

AC TEST LOADS

R1

VTM

OUTPUT

30 pF

R2

Including

jig and

scope

Figure 1

R1

VTM

OUTPUT

5 pF

R2

Including

jig and

scope

Figure 2

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

5

Rev. B

02/24/05

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