IS62WV51216ALL 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62WV51216ALL

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV51216ALL, IS62WV51216BLL

ISSI ®

IS62WV51216ALL, POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

Test Conditions

ICC

VDDDynamicOperating VDD=Max.,

Com.

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

ICC1

Operating Supply

Current

VDD = Max., CS1 = 0.2V

WE = VDD – 0.2V

Com.

Ind.

CS2 = VDD – 0.2V, f = 1MHZ

ISB1

TTL Standby Current

VDD = Max.,

Com.

(TTL Inputs)

VIN = VIH or VIL

Ind.

CS1 = VIH , CS2 = VIL,

f = 1 MHZ

OR

ULB Control

VDD = Max., VIN = VIH or VIL

CS1 = VIL, f = 0, UB = VIH, LB = VIH

ISB2

CMOS Standby

VDD = Max.,

Current(CMOSInputs) CS1 ≥ VDD – 0.2V,

CS2 ≤ 0.2V,

VIN ≥ VDD – 0.2V, or

VIN ≤ 0.2V, f = 0

Com.

Ind.

typ.(1)

OR

ULB Control

VDD = Max., CS1 = VIL, CS2=VIH

VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0;

UB / LB = VDD – 0.2V

Note:.

1. Typical values are measured at VDD = 1.8V, TA = 25oC and not 100% tested.

Max. Unit

70

20 mA

25

4

mA

4

0.3 mA

0.3

15

µA

21

3

6

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

02/24/05

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