IS62WV51216ALL-70XI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62WV51216ALL-70XI

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV51216ALL, IS62WV51216BLL

ISSI ®

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

Symbol

Parameter

45 ns

55 ns

70 ns

Min. Max.

Min. Max.

Min. Max.

Unit

tRC

Read Cycle Time

45

—

55

—

70

—

ns

tAA

Address Access Time

—

45

—

55

—

70

ns

tOHA

Output Hold Time

10

—

10

—

10

—

ns

tACS1/tACS2

CS1/CS2 Access Time

—

45

—

55

—

70

ns

tDOE

OE Access Time

—

20

—

25

—

35

ns

tHZOE(2)

OE to High-Z Output

—

15

—

20

—

25

ns

tLZOE(2)

OE to Low-Z Output

5

—

5

—

5

—

ns

t t HZCS1/ HZCS2(2) CS1/CS2 to High-Z Output

0

15

0

20

0

25

ns

t t LZCS1/ LZCS2(2) CS1/CS2 to Low-Z Output

10

—

10

—

10

—

ns

tBA

LB, UB Access Time

—

45

—

55

—

70

ns

tHZB

LB, UB to High-Z Output

0

15

0

20

0

25

ns

tLZB

LB, UB to Low-Z Output

0

—

0

—

0

—

ns

Notes:

1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to

VDD-0.2V/0.4V to VDD-0.3V and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

AC WAVEFORMS

READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = VIL, CS2 = WE = VIH, UB or LB = VIL)

ADDRESS

DQ0-D15

tRC

tAA

tOHA

PREVIOUS DATA VALID

tOHA

DATA VALID

8

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

02/24/05

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