Symbol
gfs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
R
thJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
48
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
750
pF
125
pF
30
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE
CES
50 70 nC
15 25 nC
25 45 nC
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 • VCES, RG = Roff = 150 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 • VCES, RG = Roff = 150 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased R
G
100
ns
200
ns
500 700 ns
300 500 ns
1.2 2.0 mJ
100
ns
200
ns
1
mJ
600 800 ns
400 700 ns
2
mJ
1.25 K/W
0.25
K/W
IXGP12N60U1
TO-220 AB Outline
Dim. Millimeter
Min. Max.
A 12.70 14.93
B 14.23 16.50
C 9.66 10.66
D 3.54 4.08
E 5.85 6.85
F 2.29 2.79
G 1.15 1.77
H 2.79 6.35
J 0.64 0.89
K 2.54 BSC
M 4.32 4.82
N 0.64 1.39
Q 0.51 0.76
R 2.04 2.49
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
0.230 0.270
0.090 0.110
0.045 0.070
0.110 0.250
0.025 0.035
0.100 BSC
0.170 0.190
0.025 0.055
0.020 0.030
0.080 0.115
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
I = I , V = 0 V,
F
F
C90 GE
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.75 V
IRM
trr
RthJC
IF = IC90, VGE = 0 V, -diF/dt = 64 A/µs
2.5
VR = 360 V
TJ = 100°C 150
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C 35
A
ns
50 ns
2.5 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025