IXGR50N60BD1 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXGR50N60BD1 Datasheet PDF : 5 Pages
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6
TJ = 125°C
5 RG = 4.7Ω
4
3
12
10
E(ON)
8
E(OFF)
6
2
4
1
2
0
0
0
20
40
60
80
100
IC - Amperes
Fig. 7. Dependence of EON and EOFF on IC.
20
IC =50A
VCE = 250V
15
10
5
0
0
50 100 150 200 250 300
Qg - nanocoulombs
Fig. 9. Gate Charge
1
IXGR 50N60B
IXGR 50N60BD1
6
5
TJ = 125°C
E(ON)
4
IC = 100A
12
10
E(OFF)
8
3
E(ON)
2
1
E(OFF)
E(ON)
0
0
10
IC = 50A
IC =25A
20 30 40
6
4
E(OFF)
2
0
50 60
RG - Ohms
Fig. 8. Dependence of tfi and EOFF on RG.
600
100
10
TJ = 125°C
RG = 5.2 Ω
dV/dt < 5V/ns
1
0.1
0
100 200 300 400 500
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. IGBT Transient Thermal Resistance
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