K6E0808C1C-TC12 데이터 시트보기 (PDF) - Samsung
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K6E0808C1C-TC12 Datasheet PDF : 8 Pages
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K6E0808C1C-C
PRELIMINARY
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
Output Loads(A)
DOUT
255Ω
+5V
480Ω
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
255Ω
+5.0V
480Ω
5pF*
* Including Scope and Jig Capacitance
READ CYCLE
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
K6E0808C1C-12
Min
Max
12
-
-
12
-
12
-
6
3
-
0
-
0
6
0
6
3
-
0
-
-
12
K6E0808C1C-15
Min
Max
15
-
-
15
-
15
-
7
3
-
0
-
0
7
0
7
3
-
0
-
-
15
K6E0808C1C-20
Unit
Min
Max
20
-
ns
-
20
ns
-
20
ns
-
9
ns
3
-
ns
0
-
ns
0
10
ns
0
10
ns
3
-
ns
0
-
ns
-
20
ns
-4-
Rev 4.0
February 1998
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