KM6264B 데이터 시트보기 (PDF) - Samsung

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KM6264B

8Kx8 bit Low Power CMOS Static RAM

Samsung 

KM6264B Family

CMOS SRAM

DATA RETENTION CHARACTERISTICS

Item

Vcc for data retention

Data retention current

Symbol

Vdr

Idr KM6264BL

KM6264BL-L

KM6264BLE

KM6264BLE-L

KM6264BLI

KM6264BLI-L

Test Condition* Min

/CS***¡ ÃVcc-0.2V

2.0

Vcc=3.0V

L-Ver -

/CS¡ ÃVcc-0.2V LL-Ver -

L-Ver -

LL-Ver -

L-Ver -

LL-Ver -

Data retention set-up time tSDR

See data retention

0

Recovery time

tRDR

waveform

5

* 1) Commercial Product : Ta=0 to 70 ° C, unless otherwise specified

2) Extended Product : Ta=-25 to 85 ° C, unless otherwise specified

3) Industrial Product : Ta=-40 to 85 ° C, unless otherwise specified

** Ta=25 ° C

*** /CS1¡ ÃVcc-0.2, CS2 ¡ ÃVcc-0.2(/CS1 Controlled) or CS2 ¡ Ã0.2(CS2 Controlled)

Typ** Max

- 5.5

1 50

0.5 5

- 50

- 25

- 50

- 25

--

--

Unit

V

uA

ms

DATA RETENTION TIMING DIAGRAM

1) /CS1 controlled

tSDR

Data retention mode

tRDR

Vcc

4.5V

2.2V

Vdr

/CS1

GND

2) CS2 controlled

Vcc

4.5V

CS2

Vdr

0.4V

GND

tSDR

/CS1¡ ÃVcc-0.2V

Data retention mode

tRDR

CS2¡ Â0.2V

6

ELECTRONICS

Revision. 0.0

Auust. 1996

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