LS656AB 데이터 시트보기 (PDF) - STMicroelectronics
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LS656AB Datasheet PDF : 15 Pages
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LS656
ELECTRICAL CHARACTERISTICS (refer to the test circuits, VG = 1 to 2V, IL = 12 to 80mA, S1,
S2 and S3 in (a), Tamb = – 25 to + 50oC, f = 200 to 3400Hz, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit Fig.
SPEECH OPERATION
VL Line Voltage
Tamb = 25°C
IL = 12mA
IL = 30mA
IL = 60mA
V
–
3.4
4.0
5.1
7.0
CMR Common Mode Rejection
f = 1kHz
50
dB 1
GS Sending Gain
Tamb = 25°C, f = 1kHz,
VMI = 2mV
IL = 25mA
48
IL = 50mA
44
dB 2
51
47
Sending Gain Flatness
(versus frequency)
VMI = 2mV, fref = 1kHz
–1
+ 1 dB 2
Sending Gain Flatness
(versus current)
VMI = 3 mV, Iref = 50mA, – 1
S3 in (b)
+ 1 dB 2
Sending Distortion
f = 1kHz, IL = 16mA
Vso = 775mV
Vso = 900mV
2
3
%
10 %
Sending Noise
VMI =0V; VG = 1V; S1 in (b)
– 71
dBmp 2
Microphone Input Impedance (pin 1-16) VMI = 2mV
40
kΩ –
Sending Gain in MF Operation
VMI = 2mV, S2 in (b)
– 30
dB 2
GR Receiving gain
VRI = 0.3V, f = 1kHz,
Tamb = 25°C
IL = 25mA
IL = 50mA
–6
– 11
dB 3
–3
–8
Receiving Gain Flatness (vs. freq.)
VRI = 0.3V, fref = 1kHz
–1
+ 1 dB 3
Receiving Gain Flatness (vs. current)
VRI = 0.3V, Iref = 50mA,
–1
S3 in (b)
+ 1 dB 3
Receiving Distortion
f = 1kHz, IL = 15mA
VRO = 400mV
VRO = 450mV
%
3
3
10
Receiving Noise
Receiving Ouptut Impedance
(pins 12-13)
VRI = 0V; VG = 1V; S1 in (b)
150
VRO = 50mV
30
µV 3
Ω
–
Sidetone
f = 1kHz, Tamb = 25°C,
S1 in (b)
36 dB 2
ZML Line Matching Impedance
VRI = 0.3V, f = 1kHz
500 600 700 Ω
3
I8
Input Current for Gain Control (pin 8)
– 10 µA –
4/15
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