LS627 데이터 시트보기 (PDF) - Linear Integrated System

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LS627

PHOTO FET LIGHT SENSITIVE JFET

Linear Integrated System 

Linear Integrated Systems

FEATURES

DIRECT REPLACEMENT FOR CRYSTALONICS FF627

FLAT GLASS TOP FOR EXTERNAL OPTICS

ULTRA HIGH SENSITIVITY

ABSOLUTE MAXIMUM RATINGS1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +200 °C

Operating Junction Temperature

-55 to +165 °C

Maximum Power Dissipation

Continuous Power Dissipation

400mW

Maximum Currents

Gate Current

50mA

Maximum Voltages

Drain to Source

15V

Drain to Gate

15V

Gate to Source

-10V

LS627

PHOTO FET

LIGHT SENSITIVE JFET

TO-72

BOTTOM VIEW

D 2 3G

S 1 4C

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL CHARACTERISTIC

MIN TYP MAX UNITS

VGS(off)

SG

SD

λIg

λId

IDSS

IGSS

gfs

RDS(on)

CGS

CGD

tr

tf

Gate to Source Cutoff Voltage (VPO) 1.0

Gate Sensitivity2

6.4

5.0

V

24 µA/mW/cm2

Drain Sensitivity3

500

mA/mW/cm2

Gate Current (Light)4

10

37.5 nA/FC

Drain Current (Light)4

800

µA/FC

Drain Saturation Current

8.0

mA

Gate Leakage Current (Dark)

30

pA

Forward Transconductance (gm)

8000

µS

Drain to Source On Resistance

100

Ω

Gate to Source Capacitance

Gate to Drain Capacitance

Rise Time5

Fall Time6

35

pF

20

30

ns

50

CONDITIONS

VDS = 10V, ID = 0.1µA

VDS = 10V, VGS = 0V, λ = 0.9µm

VDS = 10V, VGS = 0V, RG = 1MΩ

VDS = 10V, VGS = 0V

VDS = 10V, VGS = 0V, RG = 1MΩ

VDS = 10V, VGS = 0V

VGS = -10V, VDS = 0V

VDS = 10V, VGS = 0V, f = 1kHz

VDS = 0.1V, VGS = 0V

VGS = -10V, f = 140kHz

VGD = -10V, f = 140kHz

VDS = 10V, RL = RG = 100Ω

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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