MAX17409 데이터 시트보기 (PDF) - Maxim Integrated
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MAX17409 Datasheet PDF : 32 Pages
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1-Phase Quick-PWM GPU Controller
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, VIN = 12V, VDD = VCC = 5V, SHDN = ILIM = VCC, SKIP = GNDS = PGND = GND, VFB = VCSP = VCSN = 1.05V;
G5–G0 set for 1.05V (G0–G5 = 100110); TA = 0°C to +85°C, unless otherwise specified. Typical values are at TA = +25°C.) (Note 3)
PARAMETER
SYMBOL
THERMAL COMPARATOR AND PROTECTION
CONDITIONS
MIN TYP MAX UNITS
VRHOT Trip Threshold
Measured at THRM with respect to VCC;
29.2
30
30.8
%
falling edge; typical hysteresis = 100mV
VRHOT Delay
t VRHOT
THRM forced 25mV below the VRHOT trip
threshold; falling edge
10
µs
VRHOT Output On-Resistance
VRHOT Leakage Current
R VRHOT Low state
I VRHOT High state, VRHOT forced to 5V, TA = +25°C
2
8
1
µA
THRM Input Leakage
I THRM VTHRM = 0 to 5V, TA = +25°C
-100
+100
nA
Thermal-Shutdown Threshold
TSHDN Typical hysteresis = 15°C
160
°C
VALLEY CURRENT LIMIT AND DROOP
Current-Limit Threshold Voltage
(Positive Adjustable)
VLIMIT VCSP - VCSN
VREF - VILIM = 100mV
7
10
13
mV
VREF - VILIM = 500mV
45
50
55
Current-Limit Threshold Voltage
(Positive Default)
ILIM = VCC, VCSP - VCSN
20
22.5
25
mV
Current-Limit Threshold Voltage
(Negative) Accuracy
VLIMIT(NEG) VCSP - VCSN, nominally -125% of VLIMIT
-4
+4
mV
Current-Limit Threshold Voltage
(Zero Crossing)
VZERO VPGND - VLX
1
mV
CSP, CSN Common-Mode
Input Range
0
1.9
V
CSP, CSN Input Current
ILIM Input Current
Droop Amplifier (GMD) Offset
Droop Amplifier (GMD)
Transconductance
GATE DRIVERS
DH Gate-Driver On-Resistance
DL Gate-Driver On-Resistance
DH Gate-Driver Source Current
DH Gate-Driver Sink Current
DL Gate-Driver Source Current
DL Gate-Driver Sink Current
Internal BST Switch
On-Resistance
TA = +25°C
TA = +25°C
(VCSP - VCSN) at IFB = 0
IFB/(VCSP - VCSN);
FB = CSN = 0.45V to 2.0V,
and (VCSP - VCSN) = -15.0mV to +15.0mV
RON(DH)
BST - LX forced
to 5V
High state (pullup)
Low state (pulldown)
High state (pullup)
RON(DL)
Low state (pulldown)
IDH(SOURCE) DH forced to 2.5V, BST - LX forced to 5V
IDH(SINK) DH forced to 2.5V, BST - LX forced to 5V
IDL(SOURCE) DL forced to 2.5V
IDL(SINK) DL forced to 2.5V
RBST IBST = 10mA, VDD = 5V
-0.2
-100
-0.75
+0.2
µA
+100
nA
+0.75 mV
592 600 608
µS
0.9
2.5
0.7
2.0
0.7
2.0
0.25 0.7
2.2
A
2.7
A
2.7
A
8
A
10
20
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