MAX9952DCCB-T 데이터 시트보기 (PDF) - Maxim Integrated

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MAX9952DCCB-T

Dual Per-Pin Parametric Measurement Units

Maxim Integrated 

Dual Per-Pin Parametric

Measurement Units

ABSOLUTE MAXIMUM RATINGS

VCC to AGND .......................................................................+20V

VEE to AGND.........................................................................-15V

VCC to VEE ...........................................................................+32V

VL to AGND............................................................................+6V

AGND to DGND.....................................................-0.5V to +0.5V

Digital Inputs/Outputs ..................................-0.3V to (VL + 0.3V)

All Other Pins to AGND ....................(VEE - 0.3V) to (VCC + 0.3V)

Continuous Power Dissipation (TA = +70°C)

MAX9951_CCB (derate 125mW/°C above +70°C) ...10,000mW

MAX9952_CCB (derate 43.5mW/°C above +70°C) .....3478mW

θJA MAX9951_CCB (Note 1) ...........................................+8°C/W

θJC MAX9951_CCB (Note 1) ...........................................+2°C/W

θJA MAX9952_CCB (Note 1) .........................................+23°C/W

θJC MAX9952_CCB (Note 1) ...........................................+2°C/W

Junction Temperature ......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Operating Temperature Range (commercial) ........0°C to +70°C

Lead Temperature (soldering 10s) ..................................+300°C

Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

(VCC = +12V, VEE = -7V, VL = +3.3V, TA = +25°C, unless otherwise noted. Specifications at TA = TMIN and TA = TMAX are guaranteed

by design and characterization. Typical values are at TA = +25°C, unless otherwise noted.) (Note 2)

PARAMETER

FORCE VOLTAGE

SYMBOL

CONDITIONS

MIN

TYP

MAX UNITS

Force Input Voltage

Range

Forced Voltage

Input Bias Current

Forced-Voltage Offset

Forced-Voltage-Offset

Temperature Coefficient

VIN0_,

VIN1_

VDUT

VFOS

VEE + 2.5

DUT current at full scale

DUT current = 0

VCC = +12V, VEE = -7V

VCC = +18V, VEE = -12V

-2

-7

VEE + 2.5

-25

±1

±100

VCC - 2.5 V

+7

+13

V

VCC - 2.5

µA

+25

mV

µV/°C

Forced-Voltage Gain

Error

VFGE Nominal gain of +1

-1

0.005

+1

%

Forced-Voltage-Gain

Temperature Coefficient

±10

ppm/°C

Forced-Voltage Linearity

Error

VFLER Gain and offset errors calibrated out (Notes 3, 4)

-0.02

+0.02 %FSR

MEASURE CURRENT

Measure-Current Offset

Measure-Current-Offset

Temperature Coefficient

IMOS (Note 3)

-1

+1

%FSR

±20

ppm/°C

Measure-Current Gain

Error

IMGE (Note 5)

-1

+1

%

Measure-Current-Gain

Temperature Coefficient

±20

ppm/°C

Linearity Error

IMLER

Gain and offset errors calibrated out

(Notes 3, 4, 6)

-0.02

+0.02 %FSR

2 _______________________________________________________________________________________

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