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NLV14011BDG 데이터 시트보기 (PDF) - ON Semiconductor

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NLV14011BDG
ONSEMI
ON Semiconductor ONSEMI
NLV14011BDG Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MC14001B Series
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
55_C
25_C
125_C
VDD
Symbol Vdc Min
Max
Min
Typ (2)
Max
Min
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin = VDD or 0
“0” Level VOL
5.0
0.05
10
0.05
15
0.05
0
0.05
0.05
0
0.05
0.05
0
0.05
0.05
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin = 0 or VDD
“1” Level VOH
5.0 4.95
4.95
5.0
10
9.95
9.95
10
15 14.95
14.95
15
4.95
9.95
14.95
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Input Voltage
“0” Level VIL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VO = 4.5 or 0.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ “1”Level VIH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VO = 0.5 or 4.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Drive Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VOH = 9.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VOH = 13.5 Vdc)
IOH
Source
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VOL = 1.5 Vdc)
Sink IOL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Input Current
Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Input Capacitance
Cin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Vin = 0)
5.0
1.5
2.25
1.5
1.5
10
3.0
4.50
3.0
3.0
15
4.0
6.75
4.0
4.0
5.0
3.5
3.5
2.75
3.5
10
7.0
7.0
5.50
7.0
15
11
11
8.25
11
5.0 – 3.0
– 2.4
– 4.2
5.0 – 0.64
– 0.51 – 0.88
10 – 1.6
– 1.3 – 2.25
15 – 4.2
– 3.4
– 8.8
– 1.7
– 0.36
– 0.9
– 2.4
5.0 0.64
0.51
0.88
10
1.6
1.3
2.25
15
4.2
3.4
8.8
0.36
0.9
2.4
15
± 0.1
± 0.00001 ± 0.1
± 1.0
5.0
7.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Quiescent Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Per Package)
IDD
5.0
0.25
0.0005 0.25
7.5
10
0.5
0.0010
0.5
15
15
1.0
0.0015
1.0
30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Supply Current (3) (4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Dynamic plus Quiescent,
Per Gate, CL = 50 pF)
IT
5.0
10
15
IT = (0.3 mA/kHz) f + IDD/N
IT = (0.6 mA/kHz) f + IDD/N
IT = (0.9 mA/kHz) f + IDD/N
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
pF
mAdc
mAdc
3. The formulas given are for the typical characteristics only at 25_C.
4. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL 50) Vfk
where: IT is in mA (per package), CL in pF, V = (VDD VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates
per package.
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