MC33990 데이터 시트보기 (PDF) - Freescale Semiconductor
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MC33990 Datasheet PDF : 16 Pages
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents
are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380 Ω to GND, 3.6 nF to GND
BUS Load = 257 Ω to GND, 20.2 nF to GND
IBAT (OP1)
–
IBAT (OP2)
–
Battery Bus Low Input Current
After SLEEP Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
IBAT(BUS L1)
–
IBAT(BUS L2)
–
Sleep State Battery Current
VSLEEP = 0 V
IBAT(SLEEP)
–
3.0
22.4
1.1
6.4
38.2
mA
11.5
32
mA
3.0
8.5
µA
65
BUS
BUS Input Receiver Threshold (7)
Threshold High (Bus Increasing until Rx ≥ 3.0 V)
Threshold Low (Bus Decreasing until Rx ≤ 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V)
BUS-Out Voltage (Tx = 5.0 V, 257 Ω ≤ RBUS(L) to GND ≤ 1380 Ω)
8.2 V ≤ VBAT ≤ 16 V
4.25 V ≤ VBAT ≤ 8.2 V
Tx = 0 V
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V ≤ VBUS ≤ 4.8 V
BUS Leakage Current
-2.0 V ≤ VBUS ≤ 0 V (≥ 2.0 ms after Tx Falls to 0 V)
0 V ≤ VBUS ≤ VBAT
0 V ≤ VBUS ≤ 8.0 V
BUS Thermal Shutdown (8) (Tx = 5.0 V, IBUS = -0.1 mA)
Increase Temperature until VBUS ≤ 2.5 V
BUS Thermal Shutdown Hysteresis (9)
TBUS (LIM) - TBUS (REEN)
LOAD Input Current with Loss of Ground
VLOAD = -18 V (see Figure 4)
BUS Input Current with Loss of Ground
VBUS = -18 V (see Figure 4)
VBUS(IH)
4.25
3.9
VBUS(IL)
–
3.7
BUSTH(SLEEP)
2.4
3.0
VBUS(HYST)
0.1
0.2
VBUS (OUT1)
VBUS (OUT2)
VBUS (OUT3)
IBUS (SHORT)
6.25
VBAT - 1.6
–
60
6.9
–
0.27
129
IBUS (LEAK1)
-0.5
IBUS (LEAK2)
-0.5
IBUS (LEAK3)
–
TBUS (LIM)
150
TBUS (LI MHYS)
10
ILOAD (LOG)
-1.0
IBUS (LOG)
-1.0
-0.055
0.5
0.25
170
12
–
–
V
–
3.5
3.4
0.6
V
8.0
VBAT
0.7
mA
170
mA
0.5
1.0
0.5
°C
190
°C
15
mA
0.1
mA
0.1
Notes
7. Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C.
8. Device characterized but not production tested for thermal shutdown.
9. Device characterized but not production tested for thermal shutdown hysteresis.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33990
5
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