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MDE6IC9120NR1 Datasheet PDF : 18 Pages
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Freescale Semiconductor
Technical Data
Document Number: MDE6IC9120N
Rev. 0, 11/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MDE6IC9120N/GN wideband integrated circuit is designed with
on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
• Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE Output PAR ACPR
(%)
(dB)
(dBc)
MDE6IC9120NR1
MDE6IC9120GNR1
920 - 960 MHz, 25 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
32.5
38.4
6.6
- 39.0
940 MHz
960 MHz
32.0
38.0
31.3
37.7
6.7
- 40.4
7.0
- 39.6
CASE 1866 - 02
TO - 270 WBL - 16
PLASTIC
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
MDE6IC9120NR1
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to
120 Watts CW Pout
• Typical Pout @ 1 dB Compression Point ] 120 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance
Parameters and Common Source S - Parameters
CASE 1867 - 02
TO - 270 WBL - 16 GULL
PLASTIC
MDE6IC9120GNR1
• On - Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VGS1A
RFinA
VGS2A
VDS1A
VDS1B
VGS2B
RFinB
VGS1B
Quiescent Current
Temperature Compensation (1)
Quiescent Current
Temperature Compensation (1)
CARRIER (2)
RFout1/VDS2A
PEAKING (2)
RFout2/VDS2B
VGS1A
GND
RFinA
GND
GND
VGS2A
VDS1A
VDS1B
VGS2B
GND
GND
RFinB
GND
VGS1B
1
2
3
4
16
5
6
7
8
9
10
15
11
12
13
14
(Top View)
RFout1/VDS2A
RFout2/VDS2B
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MDE6IC9120NR1 MDE6IC9120GNR1
1
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