MDE6IC9120NR1 데이터 시트보기 (PDF) - Freescale Semiconductor
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MDE6IC9120NR1 Datasheet PDF : 18 Pages
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Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Stage 1 — On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1
1.7
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1A = IDQ1B = 90 mA)
VGS(Q)
—
2.5
—
Vdc
Fixture Gate Quiescent Voltage
VGG(Q)
7.4
8.1
8.8
Vdc
(VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, Measured in Functional Test)
Stage 2 — Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Stage 2 — On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 160 μAdc)
VGS(th)
1
1.7
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2A = 550 mA)
VGS(Q)
—
2.1
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2A = 550 mA, Measured in Functional Test)
VGG(Q)
5.8
6.5
7.2
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 407 mA)
VDS(on)
0.15
0.3
0.8
Vdc
Functional Tests (2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B =
1.6 Vdc, Pout = 25 W Avg., f = 940 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
30.0
32.0
36.0
dB
Power Added Efficiency
PAE
36.0
38.0
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
5.8
6.7
—
dB
Adjacent Channel Power Ratio
ACPR
—
- 40.4
- 36.0
dBc
Typical Broadband Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A =
550 mA, VG2B = 1.6 Vdc, Pout = 25 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
32.5
38.4
6.6
- 39.0
940 MHz
32.0
38.0
6.7
- 40.4
960 MHz
31.3
37.7
7.0
- 39.6
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
RF Device Data
Freescale Semiconductor
MDE6IC9120NR1 MDE6IC9120GNR1
3
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