MG150J7KS50 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
제조사
MG150J7KS50 Datasheet PDF : 6 Pages
| |||
Brake Stage
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
VR
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
Unit
600
V
±20
V
600
V
50
A
100
50
A
100
120
W
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
3/3
N·m
MG150J7KS50
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector-emitter cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Reverse current
Forward voltage
Rise time
Turn-on time
Switching time Fall time
Turn-off time
Reverse recovery time
Thermal resistance
Note 2: Silicone grease is applied.
Symbol
IGES
ICES
VGE (off)
VCE (sat)
Cies
IR
VF
tr
ton
tf
toff
trr
Rth (j-c)
Rth (c-f)
Test Condition
Min
VGE = ±20V, VCE = 0V
―
VCE = 600V, VGE = 0V
―
VCE = 5V, IC = 5mA,
5.0
IC = 50A, VGE = 15V
―
VCE = 10V, VGE = 0V, f = 1MHz
―
VR = 600V
―
IF = 150A
―
Inductive load
VCC = 300V
IC = 50A
VGE = ±15V
RG = 24Ω
―
―
―
―
(Note 1)
―
Transistor stage
―
Diode stage
―
Case to fin
(Note 2) ―
Typ. Max UNIT
― ±500 nA
―
1.0 mA
―
8.0
V
2.0
2.5
V
4.0
―
nF
―
1.0 mA
2.2
2.8
V
0.08 0.16
0.10 0.20
0.22 0.44 µs
0.50 1.00
0.23 0.35
― 1.04
― 2.00 °C / W
0.05 ―
3
2001-08-16
Share Link: 