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MG100Q2YS65H 데이터 시트보기 (PDF) - Toshiba
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MG100Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba
MG100Q2YS65H Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
C
– V
CE (sat)
200
20 V
15 V
12 V
150
18 V
10 V
100
50
0
0
PC
=
690 W
VGE
=
8 V
Common emitter
Tc
=
25°C
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
MG100Q2YS65H
I
C
– V
CE (sat)
200
20 V
18 V
12 V
150
15 V
10 V
100
50
VGE
=
8 V
Common emitter
0
Tc
=
125°C
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
V
CE
– V
GE
12
Common emitter
Tc
=
25°C
10
8
6
IC
=
200 A
4
100 A
2
50 A
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
V
CE
– V
GE
12
Common emitter
Tc
=
125°C
10
8
6
IC
=
200 A
4
100 A
2
50 A
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
I
C
– V
GE
200
Common emitter
VCE
=
5 V
150
100
Tc
=
125°C
25°C
-
40°C
50
0
0
4
8
12
16
Gate-emitter voltage V
GE
(V)
I
F
– V
F
200
Common cathode
VGE
=
0
-
40°C
150
100
50
125°C
Tc
=
25°C
0
0
1
2
3
4
5
Forward voltage V
F
(V)
3
2002-10-04
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