MMG3002NT1 데이터 시트보기 (PDF) - Motorola => Freescale

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MMG3002NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Motorola => Freescale 

MOTOROLA

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMG3002NT1/D

The RF MOSFET Line

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

Broadband High Linearity Amplifier

The MMG3002NT1 is a General Purpose Amplifier that is internally

input and output matched. It is designed for a broad range of Class A,

small - signal, high linearity, general purpose applications. It is suitable for

applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,

BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.

Features

• Frequency: 40 - 3600 MHz

• P1dB: 21 dBm

• Power Gain: 20 dB

• Third Order Output Intercept Point: 37.5 dBm

• Single Voltage Supply

• Internally Matched to 50 Ohms

• Low Cost SOT - 89 Surface Mount Package

• Pb - Free Leads

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

MMG3002NT1

40 - 3600 MHz, 20 dB

21 dBm

InGaP HBT

12

3

CASE 1514 - 01, STYLE 1

SOT - 89

PLASTIC

TYPICAL PERFORMANCE (1)

Characteristic

Symbol 900 2140 3500 Unit

MHz MHz MHz

Power Gain (S21)

Input Return Loss

(S11)

Gp

20 18 14.5 dB

IRL - 16 - 26 - 16 dB

Output Return Loss

(S22)

ORL

- 12 - 8

- 11 dB

Power Output @

P1db 21 21 18.5 dBm

1dB Compression

Third Order Output

Intercept Point

IP3 37.5 36

(1) VCC = 5.2 Vdc, TC = 25°C, 50 ohm system

32 dBm

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Supply Voltage (2)

VCC

7

V

Supply Current (2)

ICC

400

mA

RF Input Power

Pin

12

dBm

Storage Temperature Range

Tstg - 65 to +150 °C

Junction Temperature (3)

TJ

150

°C

(2) Voltage and current applied to device.

(3) For reliable operation, the junction temperature should not exceed

150°C.

THERMAL CHARACTERISTICS (VCC = 5.2 Vdc, ICC = 110 mA, TC = 25°C)

Characteristic

Thermal Resistance, Junction to Case

Symbol

RθJC

Value (4)

46.5

(4) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Unit

°C/W

Rev. 2

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MMG3002NT1

1

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