MMG3009NT1 데이터 시트보기 (PDF) - Freescale Semiconductor
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MMG3009NT1 Datasheet PDF : 15 Pages
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50 OHM TYPICAL CHARACTERISTICS
36
33
30
27
24
f = 900 MHz
1 MHz Tone Spacing
21
4.9
4.95
5
5.05
5.1
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
35
34
33
32
31
30
VCC = 5 Vdc
29
f = 900 MHz
1 MHz Tone Spacing
28
−40 −20
0
20
40
60
80 100
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
−30
−40
−50
−60
VCC = 5 Vdc
−70
ICC = 70 mA
f = 900 MHz
1 MHz Tone Spacing
−80
0
3
6
9
12
15
Pout, OUTPUT POWER (dBm)
Figure 10. Third Order Intermodulation versus
Output Power
105
104
103
120 125
130
135
140
145
150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 70 mA
Figure 11. MTTF versus Junction Temperature
8
6
4
2
VCC = 5 Vdc
ICC = 70 mA
0
0
1
2
3
4
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
RF Device Data
Freescale Semiconductor
−20
VCC = 5 Vdc, ICC = 70 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
−30 Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
−40
−50
−60
−70
2
4
6
8
10
12
14
16
Pout, OUTPUT POWER (dBm)
Figure 13. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3009NT1
5
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