MP02/190-10 데이터 시트보기 (PDF) - Dynex Semiconductor
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MP02/190-10 Datasheet PDF : 10 Pages
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MP02 XXX 190 Series
SURGE RATINGS - PER ARM
Symbol
ITSM
I2t
Parameter
Conditions
Surge (non-repetitive) on-state current
I2t for fusing
10ms half sine; VR = 0
Tj = 125oC
VR = 50% VRRM
10ms half sine; VR = 0
Tj = 125oC
VR = 50% VRRM
Max. Units
6800
A
5500
A
231000 A2s
150000 A2s
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
R
th(c-hs)
Tvj
Tsto
Visol
Parameter
Thermal resistance - junction to case
per Thyristor or Diode
Thermal resistance - case to heatsink
per Thyristor or Diode
Virtual junction temperature
Storage temperature range
Isolation voltage
Conditions
dc
halfwave
3 phase
Mounting torque = 6Nm
with mounting compound
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Max.
0.17
0.18
0.19
Units
oC/W
oC/W
oC/W
0.07 oC/W
125
oC
-40 to 125 oC
2.5
kV
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
V
On-state voltage
TM
At 1000A, Tcase = 25oC - See Note 1
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tj = 125oC
dV/dt Linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC
dI/dt Rate of rise of on-state current
From 67% VDRM to 400A
Gate source 20V, 20Ω
Repetitive 50Hz
Rise time 0.5µs, Tj =125oC
V
Threshold voltage
T(TO)
At Tvj = 125oC - See Note 1
r
T
On-state slope resistance
At Tvj = 125oC - See Note 1
* Higher dV/dt values available, contact factory for particular requirements.
Max.
1.75
30
200*
100
1.05
0.80
Units
V
mA
V/µs
A/µs
V
mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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