MRF5S21045NBR1 데이터 시트보기 (PDF) - Freescale Semiconductor
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MRF5S21045NBR1 Datasheet PDF : 12 Pages
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF5S21045
Rev. 1, 7/2005
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045MR1
MRF5S21045MBR1
2170 MHz, 10 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S21045NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S21045NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +15
130
0.74
Storage Temperature Range
Operating Junction Temperature
CW Operation
Tstg
- 65 to +150
TJ
200
CW
45
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
1.35
1.48
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved. MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
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