MRF5S9080NR1 데이터 시트보기 (PDF) - Freescale Semiconductor
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MRF5S9080NR1 Datasheet PDF : 20 Pages
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TYPICAL CHARACTERISTICS - 800 MHz
20
80
ηD
19
60
18
40
Gps
17
20
16
0
15
VDD = 26 Vdc
14 IDQ = 600 mA
IRL
− 20
− 40
820
840
860
880
900
920
940
f, FREQUENCY (MHz)
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 80 Watts
22
60
ηD
20
40
Gps
18
20
16
0
IRL
14
− 20
VDD = 26 Vdc
IDQ = 600 mA
12
− 40
820
840
860
880
900
920
940
f, FREQUENCY (MHz)
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 36 Watts
5
Pout = 50 W Avg.
4
3
20 W Avg.
2
5 W Avg.
1
VDD = 28 Vdc
IDQ = 550 mA
0
850
860
870
880
890
900
910
f, FREQUENCY (MHz)
Figure 20. EVM versus Frequency
7
70
VDD = 28 Vdc
6 IDQ = 550 mA
60
f = 880 MHz
5 EDGE Modulation
50
4
40
ηD
3
30
EVM
2
20
TC = 25_C
1
10
0
0
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 21. EVM and Drain Efficiency versus
Output Power
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
11
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