MRF5S9080NBR1 데이터 시트보기 (PDF) - Freescale Semiconductor
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MRF5S9080NBR1 Datasheet PDF : 20 Pages
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Freescale Semiconductor
Technical Data
Document Number: MRF5S9080N
Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
• Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts
CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).
Power Gain — 18.5 dB
Drain Efficiency — 60%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA,
Pout = 36 Watts Avg., Full Frequency Band (869 - 894 MHz or
921 - 960 MHz).
Power Gain — 19 dB
Drain Efficiency — 42%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.5% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200_C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
MRF5S9080NR1
MRF5S9080NBR1
869 - 960 MHz, 80 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9080NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9080NBR1
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
VDSS
- 0.5, +65
Vdc
VGS
- 0.5, +15
Vdc
Tstg
- 65 to +150
°C
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 80 W CW
Case Temperature 80°C, 36 W CW
RθJC
0.50
0.54
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
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