MRF5S9080NBR1 데이터 시트보기 (PDF) - Freescale Semiconductor
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MRF5S9080NBR1 Datasheet PDF : 20 Pages
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TYPICAL CHARACTERISTICS - 900 MHz
21
20
TC = −30_C
− 30_C
70
25_C
60
19 Gps
25_C
85_C
50
18
40
85_C
17
30
ηD
16
20
VDD = 26 Vdc
15
IDQ = 600 mA 10
f = 940 MHz
14
0
1
10
100
1000
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
6
5
VDD = 28 Vdc
IDQ = 550 mA
4
Pout = 53 W Avg.
3
2
13 W Avg.
1
3 W Avg.
0
900 910 920 930 940 950 960 970 980
f, FREQUENCY (MHz)
Figure 8. EVM versus Frequency
8 VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
EDGE Modulation
6
TC = 85_C
80
60
4
40
ηD
EVM
2
20
25_C
− 30_C
0
0
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. EVM and Drain Efficiency versus
Output Power
− 50
−55 SR @ 400 kHz
− 60
− 65
−70 13 W Avg.
− 75
−80 SR @ 600 kHz
Pout = 53 W Avg.
VDD = 28 Vdc
IDQ = 550 mA
f = 940 MHz
EDGE Modulation
53 W Avg.
13 W Avg.
3 W Avg.
− 85
3 W Avg.
− 90
900 910 920 930 940 950 960 970 980
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
− 45
VDD = 26 Vdc
−50 IDQ = 600 mA
f = 940 MHz
−55 EDGE Modulation
− 60
TC = 85_C
− 30_C
25_C
− 65
− 70
− 75
− 80
0
20
40
60
80
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth @ 400 kHz
versus Output Power
MRF5S9080NR1 MRF5S9080NBR1
6
− 55
VDD = 26 Vdc
−60 IDQ = 600 mA
f = 940 MHz
EDGE Modulation
− 65
− 70
TC = 85_C
25_C
− 30_C
− 75
− 80
− 85
0
20
40
60
80
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth @ 600 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
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