MRF373ALR1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF373ALR1

470- 860 MHz, 75 W, 32 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Drain- Source Breakdown Voltage

(VGS = 0 Vdc, ID =1 μA)

V(BR)DSS

70

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

IGSS

—

On Characteristics

Gate Threshold Voltage

(VDS = 10 V, ID = 200 μA)

VGS(th)

2

Gate Quiescent Voltage

(VDS = 32 V, ID = 100 mA)

VGS(Q)

2.5

Drain- Source On - Voltage

(VGS = 10 V, ID = 3 A)

VDS(on)

—

Dynamic Characteristics

Input Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Ciss

—

Output Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Coss

—

Reverse Transfer Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Crss

—

Functional Characteristics (50 ohm system)

Common Source Power Gain

Gps

16.5

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)

Drain Efficiency

η

56

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)

Typ

—

—

—

2.9

3.3

0.41

98.5

49

2

18.2

60

Max

Unit

—

Vdc

1

μAdc

1

μAdc

4

Vdc

4.5

Vdc

0.45

Vdc

—

pF

—

pF

—

pF

—

dB

—

%

MRF373ALR1 MRF373ALSR1

2

Freescale Semiconductor

RF Product Device Data

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