BLT71/8 데이터 시트보기 (PDF) - Philips Electronics

부품명

상세내역

제조사

BLT71/8

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

Product specification

BLT71/8

FEATURES

• High efficiency

• Very high gain

• Internal pre-matched input

• Low supply voltage.

PINNING - SOT96-1

PIN

1, 8

2, 4, 5, 7

3, 6

SYMBOL

b

e

c

DESCRIPTION

base

emitter

collector

APPLICATIONS

• Hand-held radio equipment in common emitter class-AB handbook, halfpage

8

5

operation for the 900 MHz communication band.

DESCRIPTION

NPN silicon planar epitaxial power transistor encapsulated

in a SOT96-1 (SO8) plastic SMD package.

1

Top view

4

MBK187

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at Ts ≤ 60 °C in a common emitter test circuit.

MODE OF OPERATION

f

(MHz)

VCE

(V)

PL

(W)

CW, class-AB

900

4.8

1.2

Gp

(dB)

≥11

typ. 13

ηC

(%)

≥55

typ. 63

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

operating junction temperature

CONDITIONS

open emitter

open base

open collector

Ts = 60 °C; VCE ≤ 6.5 V; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

MIN.

−

−

−

−

−

−65

−

MAX.

16

8

2.5

500

2.9

+150

175

UNIT

V

V

V

mA

W

°C

°C

1997 Oct 14

2

Share Link: