MSFA0M02X8 데이터 시트보기 (PDF) - Cystech Electonics Corp.
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MSFA0M02X8 Datasheet PDF : 7 Pages
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CYStech Electronics Corp.
Spec. No. : C724X8
Issued Date : 2009.06.12
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
-20
V
VGS
±12
V
Continuous Drain Current @TA=25 °C
ID
-3
Continuous Drain Current @TA=70 °C
ID
-2.4
Pulsed Drain Current (Note 1)
IDM
-12
A
Average Forward Current (Schottky)
IF
1
Pulsed Forward Current (Schottky)
IFM
3
Power Dissipation (MOSFET)
Power Dissipation (Schottky)
TA=25 °C
TA=70 °C
TA=25 °C
TA=70 °C
1.5
0.9
PD
W
1.2
0.76
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature. Duty cycle≤1%.
Thermal Resistance Ratings
Parameter
Thermal Resistance, Junction-to-case(MOSFET)
Thermal Resistance, Junction-to-ambient(MOSFET)
Thermal Resistance, Junction-to-case(Schottky)
Thermal Resistance, Junction-to-ambient(Schottky)
Symbol
Rth,j-c
Rth,j-a
Rth,j-c
Rth,j-a
Maximum
40
85
50
105
Unit
°C/W
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
ID(ON)
*RDS(ON)
-20
-
-
V VGS=0V, ID=-250μA
-0.3
-0.75 -1.2
V VDS=VGS, ID=-250μA
-
-
±100 nA VGS=±12V, VDS=0V
-
-
-1
μA VDS=-16V, VGS=0V
-
-
-10
μA VDS=-16V, VGS=0, TJ=125°C
-3
-
-
A VDS=-5V, VGS=-4.5V
-
-
85
120
100
150
mΩ
ID=-3A, VGS=-4.5V
ID=-2.5A, VGS=-2.5V
*GFS
-
4.5
-
S VDS=-5V, ID=-3A
Dynamic
Ciss
Coss
Crss
Rg
-
1033
-
-
386
-
pF VDS=-10V, VGS=0, f=1MHz
-
367
-
-
6.5
-
Ω VGS=15mV, VDS=0V, f=1MHz
MSFA0M02X8
CYStek Product Specification
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