T35L6432A 데이터 시트보기 (PDF) - Taiwan Memory Technology
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T35L6432A Datasheet PDF : 15 Pages
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T35L6432A
ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Supply Relative to VSS.
…………-0.5V to +4.6V
I/O Supply Voltage VccQ ........... Vss -0.5V to Vcc
VIN......................................... -0.5V to Vcc +0.5V
Storage Temperature (plastic)...... -55°C to +150°C
Junction Temperature ..........….................. +150°C
Power Dissipation ........................................ 1.6W
Short Circuit Output Current...................... 100mA
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage
to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions above those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0°C ≤ Ta ≤ 70°C; VCC = 3.3V +10%/-5% unless otherwise noted)
DESCRIPTION
CONDITIONS
Input High (Logic) voltage
Input Low (Logic) voltage
Input Leakage Current 0V ≤ VIN ≤ VCC
Output Leakage Current Output(s) disabled, 0V
≤ VOUT≤ VCC
Output High Voltage
IOH = -4.0 mA
Output Low Voltage
IOL = 8.0 mA
Supply Voltage
SYM.
VIH
VIL
ILI
ILO
VOH
VOL
Vcc
MIN
2
-0.3
-2
-2
MAX
VCCQ + 0.3
0.8
2
2
UNITS
V
V
µA
µA
2.4
V
0.4
V
3.1
3.6
V
NOTES
1, 2
1, 2
14
1, 11
1, 11
1
MA X
DESCRIPTION
CONDITIONS
SYM.TYP -4.5 -5 -6 -7 -8 UNITS NOTES
Power Supply Device selected; all inputs ≤VIL or Icc 200 300 270 230 190 150 mA 3, 12, 13
Current:
≥ VIH; cycle time ≥tKC MIN; VCC
Operating
= MAX; outputs open
Power Supply Device selected;ADSC ,ADSP, ISB1 56 155 140 125 115 110 mA 12, 13
Current: Idle ADV , GW ,BWE ≥ VIH; all
other
inputs≤VIL or≥VIH; VCC = MAX;
cycle time ≥ tKC MIN: outputs open
CMOS Standby Device deselected; VCC = MAX; all ISB2 0.5 5 5 5 5 5 mA 12, 13
inputs ≤ VSS + 0.2 or ≥ VCC - 0.2;
all inputs static; CLK frequency =0
TTL Standby Device deselected; all inputs ≤ VIL ISB3 15 25 25 25 25 25 mA 12, 13
or ≥ VIH; all inputs static; VCC =
MAX;CLK frequency = 0
Clock Running Device deselected; all inputs ≤ VIL ISB4 30 81 81 76 66 51 mA 12, 13
or ≥ VIH; VCC =MAX; CLK cycle
time ≥ tKCMIN
Taiwan Memory Technology, Inc. reserves the right P. 7
to change products or specifications without notice.
Publication Date: DEC. 1998
Revision:A
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