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MT28F322D18

2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY

Micron Technology 

2 MEG x 16

ASYNC/PAGE/BURST FLASH MEMORY

Table 5

Command Descriptions

CODE DEVICE MODE BUS CYCLE

DESCRIPTION

10h Alt. Program Setup First

Operates the same as PROGRAM SETUP command

20h Erase Setup

First

Prepares the CSM for the ERASE CONFIRM command. If the next

command is not an ERASE CONFIRM command, the command will be

ignored, and the bank will go to read status mode and wait for

another command.

40h Program Setup

First

A two-cycle command: The first cycle prepares for a PROGRAM

operation, and the second cycle latches addresses and data and

initiates the WSM to execute the program algorithm. The flash outputs

status register data on the rising edge of ADV#, or on the rising clock

edge when ADV# is LOW during synchronous burst mode, or on the

falling edge of OE# or CE#, whichever occurs first.

50h Clear Status

Register

First

The WSM can set the block lock status (SR1), VPP status (SR3), program

status (SR4), and erase status (SR5) bits in the status register to “1,” but

it cannot clear them to “0.” Issuing this command clears those bits to

“0.”

60h Protection

Configuration

Setup

First

Prepares the CSM for changes to the block locking status. If the next

command is not BLOCK UNLOCK, BLOCK LOCK or BLOCK LOCK DOWN

the command will be ignored, and the device will go to read status

mode.

Set Read

Configuration

Register

First

Puts the device into the set read configuration mode so that it will

be possible to set the option bits related to burst read mode.

70h Read Status

Register

First

This command places the device into a read status register mode.

Reading the device will output the contents of the status register for

the addressed bank. The device will automatically enter this mode for

the addressed bank after a PROGRAM or ERASE operation has been

initiated.

90h Read Protection

Configuration

First

Puts the device into the read protection configuration mode so that

reading the device will output the manufacturer/device codes, block

lock status, protection register, or protection register lock status.

98h Read Query

First

Puts the device into the read query mode so that reading the device

will output common flash interface information.

B0h Program/Erase

Suspend

First

Issuing this command will suspend the currently executing PROGRAM/

ERASE operation. The status register will indicate when the

operation has been successfully suspended by setting either the

program suspend (SR2) or erase suspend (SR6), and the WSM status bit

(SR7) to a “1” (ready). The WSM will continue to idle in the suspend

state, regardless of the state of all input control signals except RST#,

which will immediately shut down the WSM and the remainder of the

chip if RST# is driven to VIL.

C0h Program Device

First

Protection Register

Writes a specific code into the device protection register.

Lock Device

First

Protection Register

Locks the device protection register; data can no longer be changed.

(continued on next page)

2 Meg x 16 Async/Page/Burst Flash Memory

MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02

11

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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