MTN3400N3 데이터 시트보기 (PDF) - Cystech Electonics Corp.

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MTN3400N3

30V N-CHANNEL Enhancement Mode MOSFET

Cystech Electonics Corp. 

CYStech Electronics Corp.

30V N-CHANNEL Enhancement Mode MOSFET

MTN3400N3

Spec. No. : C414N3

Issued Date : 2007.07.05

Revised Date : 2007.12.18

Page No. : 1/ 7

Features

• VDS=30V

RDS(ON)=33mΩ@VGS=4.5V, ID=5A

RDS(ON)=52mΩ@VGS=2.5V, ID=4A

• Low on-resistance

• Low gate charge

• Excellent thermal and electrical capabilities

• Compact and low profile SOT-23 package

Equivalent Circuit

MTN3400N3

Outline

SOT-23

D

G：Gate

S：Source

D：Drain

S

G

Absolute Maximum Ratings (Ta=25°C)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current @ TA=25°C (Note 3)

Continuous Drain Current @ TA=70°C (Note 3)

Pulsed Drain Current (Note 1, 2)

Maximum Power Dissipation @ TA=25℃

Linear Derating Factor

Thermal Resistance, Junction-to-Ambient (Note 3)

Operating Junction and Storage Temperature

Symbol

VDS

VGS

ID

ID

IDM

PD

Rth,ja

Tj, Tstg

Limits

30

±12

5.8

4.9

30

1.38

0.01

90

-55~+150

Unit

V

V

A

A

A

W

W/°C

°C/W

°C

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.

MTN3400N3

CYStek Product Specification

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