MTN7002N3 데이터 시트보기 (PDF) - Cystech Electonics Corp.

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MTN7002N3

N-CHANNEL MOSFET

Cystech Electonics Corp. 

CYStech Electronics Corp.

N-CHANNEL MOSFET

MTN7002N3

Spec. No. : C325N3

Issued Date : 2002.12.18

Revised Date : 2005.01.07

Page No. : 1/4

Description

•The MTN7002N3 is a N-channel enhancement-mode MOSFET.

•Pb-free package

Symbol

Outline

MTN7002N3

SOT-23

D

G：Gate

S：Source

D：Drain

S

G

Absolute Maximum Ratings (Ta=25°C)

Parameter

Drain-Source Voltage

Drain-Gate Voltage (RGS=1MΩ)

Gate-Source Voltage

Continuous Drain Current (Ta=25°C)

Continuous Drain Current (Ta=100°C)

Pulsed Drain Current (Ta=25°C)

Total Power Dissipation (Ta=25°C)

Total Power Dissipation (Tc=25°C)

Operating Junction Temperature

Storage Temperature

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Lead Temperature, for 10 second Soldering

Symbol

BVDSS

BVDGR

VGS

ID

ID

IDM

PD

Tj

Tstg

Rth,ja

Rth,jc

TL

Limits

60

60

±40

200 *1

115 *1

800 *2

200

500

-55~+150

-55~+150

625

250

240

Unit

V

V

V

mA

mA

mA

mW

°C

°C

°C/W

°C/W

°C

Note : *1. The power dissipation of the package may result in a continuous drain current

*2. Pulse Width ≤ 300µs, Duty cycle ≤2%

MTN7002N3

CYStek Product Specification

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