MURD620CTPBF 데이터 시트보기 (PDF) - Vishay Semiconductors
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MURD620CTPBF Datasheet PDF : 8 Pages
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VS-MURD620CTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt®
Base
common
cathode
4
D-PAK (TO-252AA)
2
Common
cathode
1
3
Anode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
D-PAK (TO-252AA)
2x3A
200 V
1.0 V
See Recovery table
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION/APPLICATIONS
VS-MURD620CTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current per device
Non-repetitive peak surge current
Peak repetitive forward current per diode
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
Total device, rated VR, TC = 146 °C
Rated VR, square wave, 20 kHz, TC = 146 °C
MAX.
200
6
50
6
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
200
IF = 3 A
-
IF = 3 A, TJ = 125 °C
-
Forward voltage
VF
IF = 6 A
-
IF = 6 A, TJ = 125 °C
-
VR = VR rated
-
Reverse leakage current
IR
TJ = 125 °C, VR = VR rated
-
Junction capacitance
CT
VR = 200 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
-
-
-
-
-
-
12
8.0
MAX.
-
1.0
0.96
1.2
1.13
5
250
-
-
UNITS
V
μA
pF
nH
Document Number: 94084 For technical questions within your region, please contact one of the following:
Revision: 13-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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