MW7IC008NT1(2009) 데이터 시트보기 (PDF) - Freescale Semiconductor

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MW7IC008NT1
(Rev.:2009)

RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor 

VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA

Pout = 11 W @ 100 MHz, 9 W @ 400 MHz, 6.5 W @ 900 MHz

f

Zin

MHz

W

Zload

W

100

49.78 + j1.07

47.87 - j9.85

150

48.96 + j1.44

49.12 - j5.44

200

48.00 + j1.54

49.09 - j2.66

250

46.67 + j1.36

48.63 - j0.79

300

45.30 + j0.91

47.73 + j0.49

350

43.93 + j0.11

46.60 + j1.22

400

42.53 - j0.86

45.63 + j1.43

450

41.38 - j2.16

44.97 + j1.13

500

40.30 - j3.71

45.04 + j0.70

550

39.38 - j5.44

45.23 + j0.77

600

38.43 - j7.11

44.80 + j1.29

650

37.94 - j8.71

44.32 + j1.48

700

37.49 - j10.52

43.57 + j1.51

750

37.31 - j12.42

43.19 + j1.32

800

37.00 - j14.03

42.61 + j0.77

850

36.74 - j15.64

42.25 + j0.39

900

36.57 - j17.09

41.90 + j0.03

950

36.37 - j18.59

41.67 - j0.41

1000

36.12 - j20.06

41.77 - j1.10

1050

35.58 - j21.43

41.82 - j1.60

1100

35.00 - j22.79

41.90 - j2.01

1150

34.53 - j24.39

42.26 - j2.43

1200

33.53 - j25.97

42.51 - j2.80

1250

32.67 - j27.84

42.74 - j2.99

1300

31.61 - j29.89

43.10 - j3.11

1350

30.61 - j32.34

43.52 - j3.19

1400

29.55 - j34.81

43.86 - j3.13

1450

28.23 - j37.61

44.03 - j3.03

1500

27.34 - j40.59

44.33 - j2.67

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Device

Under Test

Output

Matching

Network

Z in

Z load

Figure 8. Series Equivalent Input and Load Impedance

MW7IC008NT1

8

RF Device Data

Freescale Semiconductor

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