MW7IC008NT1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MW7IC008NT1

RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor 

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, 100--1000 MHz Bandwidth

Characteristic

Symbol

Min

Typ

Max

Unit

IMD Symmetry @ 6.8 W PEP, Pout where IMD Third Order

Intermodulation  30 dBc (1)

IMDsym

MHz

—

0.1

—

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point (1)

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

0.1

—

MHz

Gain Flatness in 500--1000 MHz Bandwidth @ Pout = 6 W Avg.

Gain Variation over Temperature

(--30°C to +85°C)

Output Power Variation over Temperature

(--30°C to +85°C)

GF

—

1.35

—

dB

∆G

—

0.024

—

dB/°C

∆P1dB

—

0.005

—

dB/°C

Typical CW Performances — 100 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 11 W

CW, f = 100 MHz

Power Gain

Power Added Efficiency

Gps

—

23.5

—

dB

PAE

—

55

—

%

Input Return Loss

IRL

—

--20

—

dB

Pout @ 1 dB Compression Point, CW

P1dB

—

11

—

W

Typical CW Performances — 400 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 9 W

CW, f = 400 MHz

Power Gain

Power Added Efficiency

Gps

—

22.5

—

dB

PAE

—

41

—

%

Input Return Loss

IRL

—

--17

—

dB

Pout @ 1 dB Compression Point, CW

P1dB

—

9

—

W

Typical CW Performances — 900 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W

CW, f = 900 MHz

Power Gain

Power Added Efficiency

Gps

—

23.5

—

dB

PAE

—

34

—

%

Input Return Loss

IRL

—

--15

—

dB

Pout @ 1 dB Compression Point, CW

P1dB

—

6.5

—

W

1. Not recommended for wide instantaneous bandwidth modulated signals.

MW7IC008NT1

4

RF Device Data

Freescale Semiconductor

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