N0600N-S17-AY 데이터 시트보기 (PDF) - Renesas Electronics

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N0600N-S17-AY

MOS FIELD EFFECT TRANSISTOR

Renesas Electronics 

N0600N

Package Drawings (Unit: mm)

Isolated TO-220

10.0±0.3

4.7±0.2

3.2±0.2

2.54±0.2

Chapter Title

Equivalent Circuit

1.47 MAX

0.8±0.2

2.54 TYP.

2.76±0.2

0.50±0.1

2.54 TYP.

1 23

1. Gate

2. Drain

3. Source

Gate

Drain

Body

Diode

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static

electricity as much as possible, and quickly dissipate it once, when it has occurred.

R07DS0220EJ0100 Rev.1.00

Jan 25, 2011

Page 6 of 6

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