NDB4050 데이터 시트보기 (PDF) - Fairchild Semiconductor
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NDB4050 Datasheet PDF : 6 Pages
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Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 15 A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 50 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 7.5 A
ID(on)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 7.5 A
VDS = 25, VGS = 0 V,
f = 1.0 MHz
VDD = 30 V, ID = 15 A
VGS = 10 V, RGEN = 25 Ω
VDS = 48 V
ID = 15 A, VGS = 10 V
Min Typ Max Units
40
mJ
15
A
50
TJ = 125°C
V
250 µA
1
mA
100 nA
-100 nA
2
3
4
V
TJ= 125°C 1.4 2.4
3.6
0.078 0.1
Ω
TJ = 125°C
0.12 0.165
15
A
3
5.7
S
370 450 pF
165 200 pF
50 100 pF
8
20
ns
70
100
ns
18
30
ns
37
50
ns
12.7 17
nC
3.2
nC
7
nC
NDP4050 Rev. B
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