OM11N60SA 데이터 시트보기 (PDF) - Unspecified

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OM11N60SA

POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE

Unspecified 

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM11N60SA

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSS

IDSS

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

600

2.0

11.0

V

4.0 V

± 100 nA

0.1 0.25 mA

0.2 1.0 mA

A

3.1 V

VGS = 0,

ID = 250 mA

VDS = VGS, ID = 250 mA

VGS = ± 20 V

VDS = Max. Rat., VGS = 0

VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

VDS > ID(on) x RDS(on), VGS = 10 V

VGS = 10 V, ID = 5.5 A

RDS(on) Static Drain-Source On-State

Resistance1

.47 .50

VGS = 10 V, ID = 5.5 A

RDS(on) Static Drain-Source On-State

Resistance1

1.0

VGS = 10 V, ID = 5.5 A,

TC = 125 C

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OM11N55SA

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IDSS

Gate-Threshold Voltage

Gate-Body Leakage Forward

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

550

V

2.0

4.0 V

±100 nA

0.1 0.25 mA

0.2 1.0 mA

11.0

A

3.3 V

VGS = 0,

ID = 250 mA

VDS = VGS, ID = 250 mA

VGS = ± 20 V

VDS = Max. Rat., VGS = 0

VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

VDS > ID(on) x RDS(on), VGS = 10 V

VGS = 10 V, ID = 5.5 A

RDS(on) Static Drain-Source On-State

Resistance1

.37 .44

VGS = 10 V, ID = 5.5 A

RDS(on) Static Drain-Source On-State

Resistance1

.88

VGS = 10 V, ID = 5.5 A,

TC = 125 C

DYNAMIC

gfs

Ciss

Coss

Crss

Td(on)

tr

Td(off)

tf

Forward Transductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

5.0

3000

440

220

55

75

225

135

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 5.5 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 210 V, ID @ 7.0 A

ns Rg = 5 W , RL = 30 W

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

DYNAMIC

gfs

Ciss

Coss

Crss

Td(on)

tr

Td(off)

tf

Forward Transductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

5.0

3000

440

220

55

75

225

135

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 5.5 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 210 V, ID @ 7.0 A

ns Rg = 5 W , RL = 30 W

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

ISM Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 11 A Modified MOSPOWER

D

IS

Continuous Source Current

symbol showing

(Body Diode)

- 52 A the integral P-N G

ISM Source Current1

Junction rectifier.

S

(Body Diode)

- 1.4 V TC = 25 C, IS = -11 A, VGS = 0 VSD Diode Forward Voltage1

700

ns TJ = 150 C,IF = IS,

trr

Reverse Recovery Time

dlF/ds = 100 A/ms

- 11 A Modified MOSPOWER

D

symbol showing

- 52 A the integral P-N G

Junction rectifier.

S

- 1.4 V TC = 25 C, IS = -11 A, VGS = 0

700

ns TJ = 150 C,IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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