R6015FNX 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6015FNX

Nch 600V 15A Power MOSFET

ROHM Semiconductor 

R6015FNX

　 　 　 　　 　

　 　 　 　 　 　 　 　 Datasheet

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Forward Transfer

Admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

|Yfs|*6 VDS = 10V, ID = 7.5A

Ciss VGS = 0V

Coss VDS = 25V

Crss f = 1MHz

4.5

-

-

-

for 10 -

S

1660 -

1110 - pF

45 -

Effective output capacitance,

energy related

d Effective output capacitance,

e time related

d Turn - on delay time

n s Rise time

Turn - off delay time

e n Fall time

Co(er)

Co(tr)

VGS = 0V,

VDS = 0V to 480V

- 54.6 -

- 183 -

td(on)*6 VDD ⋍ 300V, VGS = 10V

-

38

-

tr*6 ID = 7.5A

- 45 -

td(off)*6 RL ⋍ 40.2Ω

- 120 240

tf*6 RG = 10Ω

- 35 70

m sig lGate charge characteristics (Ta = 25°C)

m e Parameter

Symbol

Conditions

o D Total gate charge

c Gate - Source charge

e w Gate - Drain charge

R Gate plateau voltage

Qg*6

Qgs*6

Qgd*6

V(plateau)

VDD ⋍ 300V

ID = 15A

VGS = 10V

VDD ⋍ 300V, ID = 15A

Values

Min. Typ. Max.

- 42 -

- 12 -

- 20 -

- 7.6 -

t Ne *1 Limited only by maximum temperature allowed.

o *2 Pw ≤ 10μs, Duty cycle ≤ 1%

N*3 L⋍500μH, VDD=50V, RG=25Ω, starting Tj = 25°C

pF

ns

Unit

nC

V

*4 L⋍500μH, VDD=50V, RG=25Ω, starting Tj = 25°C, f = 10kHz

*5 Reference measurement circuits Fig.5-1.

*6 Pulsed

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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