RJK5012DPP-E0T2 데이터 시트보기 (PDF) - Renesas Electronics
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RJK5012DPP-E0T2 Datasheet PDF : 7 Pages
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RJK5012DPP-E0
Typical Capacitance vs.
Drain to Source Voltage
10000
VGS = 0
f = 1 MHz
1000
Ciss
100
Coss
10
Crss
Ta = 25°C
1
0
100
200
300
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
VGS = 0
Ta = 25°C
16
Pulse Test
12
8
4
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
Dynamic Input Characteristics (Typical)
800
ID = 12 A
Ta = 25°C
16
VGS
600
VDD = 100 V
12
250 V
400 V
VDS
400
8
200
0
0
VDD = 400 V
4
250 V
100 V
0
8
16 24 32 40
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
VDS = 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0561EJ0100 Rev.1.00
Jun 21, 2012
Page 4 of 6
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