RMBA19500 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

RMBA19500

PCS 2 Watt Linear GaAs MMIC Power Amplifier

Fairchild Semiconductor 

Electrical Characteristics2

Parameter

Frequency Range

Gain (Small Signal) Over 1930–1990MHz

Gain Variation:

Over Frequency Range

Over Temperature Range

Noise Figure

Linear Output Power: for CDMA3

OIP34

PAE @ 33dBm Pout

Input VSWR (50Ω)

Drain Voltage (Vdd)

Gate Voltage (VG1, 2 and VG3)5

Quiescent Currents (IDQ1, 2 and IDQ3)5

Thermal Resistance (Channel to Case) RJC

Min

1930

33

-2

Typ

30

±1.0

±1.5

6

43

24

2:1

7.0

180, 445

11

Max

1990

-0.25

Units

MHz

dB

dB

dB

dB

dBm

dBm

%

V

V

mA

°C/W

Notes:

2. VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching to 50Ω.

3. 9 Channel Forward Link QPSK Source; 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel

at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc.

4. OIP3 specifications are achieved for power output levels of 27 and 30dBm per tone with tone spacing of 1.25MHz at band-center with adjusted supply and bias

conditions of Vdd = 6.5V and IdqTotal = 625mA (see Note 5).

5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve IDQTOTAL = 625mA can be used with

nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been optimized for CDMA operation. IDQ1, 2 and IDQ3 (or IDQTOTAL) can be adjusted

to optimize the linearity of the amplifier for other modulation systems.

The device requires external input and output matching to 50Ω as shown in Figure 3 and the Parts List.

©2003 Fairchild Semiconductor Corporation

RMBA19500 Rev. C

Share Link: