RMPA1959 데이터 시트보기 (PDF) - Fairchild Semiconductor
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RMPA1959 Datasheet PDF : 11 Pages
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Module Block Diagram
VCC1, VCC2
(1, 10)
COLLECTOR
BIAS
PA MODULE
GND
(3, 6, 7, 9, 11)
RF IN
(2)
VREF
(5)
INPUT
MATCHING
NETWORK
INTERSTAGE
MATCH
INPUT
STAGE
MMIC
OUTPUT
STAGE
INPUT STAGE
BIAS
OUTPUT STAGE
BIAS
OUTPUT
MATCHING
NETWORK
BIAS
CONTROL
RF OUT
(8)
VCC=3.4V (nom)
VREF=2.85V (nom)
1850–1910 MHz
50 Ohms I/O
Vmode (4)
Figure 1. RMPA1959 US PCS CDMA Power Amplifier Module Functional Block Diagram
Electrical Characteristics1
Symbol
Parameter
Condition
f
Operating Frequency
CDMA Operation
SSg Small-Signal Gain
Gp Power Gain
PO Linear Output Power
PO = 0dBm
PO = +28dBm, Vmode = 0V
PO = +16dBm, Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
PAEd PAEd (digital) @ +28 dBm
Vmode = 0V
PAEd (digital) @ +16 dBm
Vmode ≥ 2.0V
PAEd (digital) @ +16 dBm
Vmode ≥ 2.0V, VCC = 1.4V
Itot High Power Total Current
PO = +28dBm, Vmode = 0V
Low Power Total Current
PO = +16dBm, Vmode = 2.0V
Adjacent Channel Power Ratio IS-95
ACPR1 ±1.25 MHz Offset
ACPR2 ±2.25 MHz Offset
General Characteristics
PO = +28dBm; Vmode = 0V
PO = +16dBm; Vmode = 2.0V
PO = +28dBm; Vmode = 0V
PO = +16dBm; Vmode = 2.0V
VSWR Input Impedance
NF Noise Figure
Rx No
2fo-5fo
S
Receive Band Noise Power
PO ≤ +28dBm; 1850 to 1910 MHz
Harmonic Suppression
Spurious Outputs2,3
PO ≤ +28dBm
Load VSWR ≤ 5.0:1
Ruggedness w/Load Mismatch3 No permanent damage
Tc Case Operating Temperature
DC Characteristics
Iccq Quiescent Current
Vmode ≥ 2.0V
Iref Reference Current
Icc (off) Leakage Shutdown Current
PO ≤ +28dBm
No applied RF signal
Notes:
1: All parameters met at Tc = +25°C, Vcc = +3.4V, f = 1880 MHz, and load VSWR ≤ 1.2:1.
2: All phase angles.
3: Guaranteed by design
Min Typ Max Units
1850
1910 MHz
23
25
dB
25
28
dB
24.5
dB
28
dBm
16
dBm
36
39
%
10
%
20
%
460 530
mA
120
mA
-50 -46
dBc
-52
dBc
-60 -57
dBc
-68
dBc
2.5:1
-30
2.0:1
4
-139
dB
dBm/Hz
-30
dBc
-60
dBc
10:1
85
°C
50
mA
5
8
mA
1
5
µA
©2004 Fairchild Semiconductor Corporation
RMPA1959 Rev. D
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