RMPA1850 데이터 시트보기 (PDF) - Fairchild Semiconductor
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RMPA1850 Datasheet PDF : 9 Pages
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GSM850/GSM900 BAND
Parameter
Frequency
Output Power
Power Added Efficiency
Input Power Range
2nd Harmonics
3rd Harmonics
Forward isolation
Cross Isolation
Input VSWR
Vramp for Max. Pout
Vramp for Min. Pout
Power control range
Ruggedness
Stability
Output Noise Power, 20 MHz offset
Specification
Min. Typ. Max.
824
849
880
915
34
34.5
34.5
35
50
55
0
3
-10
-15
-30
-30
2.5:1
1.4
1.8
0.3
50
no permanent damage
-36
-82
Unit
MHz
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
V
V
dB
dBm
dBm
Condition
GSM850 band
GSM900 band
GSM850 band
GSM900 band
@ Pout max
Vramp, TX_EN = 0.2V, Pin = 5 dBm, @2fo
Vramp = 0.1 to 1.8V
Output VSWR = 10:1, Pout ≤ 34.5 dBm
Load 8:1
RBW = 100 KHz
DCS/PCS BAND
Parameter
Frequency
Output Power
Power Added Efficiency
Input Power Range
2nd Harmonics
3rd Harmonics
Forward isolation
Cross Isolation
Input VSWR
Vramp for Max. Pout
Vramp for Min. Pout
Power control range
Ruggedness
Stability
Noise Power, 20 MHz offset
Specification
Min.
Typ.
Max.
1710
1785
1850
1910
32.5
33
32
32.5
45
50
0
3
-15
-10
-30
-20
2.5:1
1.4
1.8
0.3
50
no permanent damage
-36
-82
Unit
MHz
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
Condition
DCS band
PCS band
DCS band
PCS band
@ Pout max
Vramp, TX_EN = 0.2V, Pin = 5 dBm, @2fo
V
V
dB
dBm
dBm
Vramp = 0.1 to 1.8V
Output VSWR = 10:1,Pout ≤ 32.5dBm
Load 8:1
RBW = 100 KHz, 20 MHz offset
1. VBATT = 3.5V, VREG = 2.8V, PIN = 3 dBm, TX-EN = high, T = 25°C, 12.5% duty cycle
RMPA1850 Rev. A1
2
www.fairchildsemi.com
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