RMPA1765 데이터 시트보기 (PDF) - Fairchild Semiconductor

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RMPA1765

K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module

Fairchild Semiconductor 

RMPA1765

K-PCS, CDMA, CDMA2000-1X and WCDMA

Power Edge™ Power Amplifier Module

October 2006

Features

■ Single positive-supply operation and low power and

shutdown modes

■ 38% CDMA/WCDMA efficiency at +28 dBm average

output power

■ Compact lead-free compliant LCC package-

3.0 x 3.0 x 1.0mm with industry standard pinout

■ Internally matched to 50 Ohms and DC blocked RF

input/output.

■ Meets CDMA2000-1XRTT/WCDMA performance

requirements

■ Meets HSDPA performance requirements

General Description

The RMPA1765 power amplifier module (PAM) is

designed for Korean CDMA, CDMA2000-1X, WCDMA,

and HSDPA personal communications system (PCS)

applications. The 2 stage PAM is internally matched to

50 Ohms to minimize the use of external components

and features a low-power mode to reduce standby cur-

rent and DC power consumption during peak phone

usage. High power-added efficiency and excellent linear-

ity are achieved using Fairchild RF’s InGaP Heterojunc-

tion Bipolar Transistor (HBT) process.

Device

Functional Block Diagram

PA MODULE

(Top View)

Vcc1 1

MMIC

RF IN

2

Input

Match

Vmode 3

DC Bias Control

Vref 4

8 Vcc2

Output

Match

7

RF OUT

6 GND

5 GND

(paddle ground on package bottom)

©2005 Fairchild Semiconductor Corporation

1

RMPA1765 Rev. E

www.fairchildsemi.com

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