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RQA0002DNSTB-E 데이터 시트보기 (PDF) - Renesas Electronics

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RQA0002DNSTB-E
Renesas
Renesas Electronics Renesas
RQA0002DNSTB-E Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
RQA0002DNS
Output Power, Drain Current
vs. Input Power
40
2.0
Pout
30
1.5
ID
20
1.0
10
0.5
VDS = 3.6 V
f = 520 MHz
IDQ = 200 mA
0
0
0
5
10 15 20
25
Input Power Pin (dBm)
Power Gain, Power Added Efficiency
vs. Frequency
20
40
15
30
10
PG
20
5
0
450
PAE
VDS = 3.6 V 10
IDQ = 200 mA
Pin = 25 dBm
0
470 490 510 530 550
Frequency f (MHz)
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
20
80
15
70
PG
10
PAE
60
5
50
f = 520 MHz
IDQ = 200 mA
Pin = 25 dBm
0
40
3
3.5
4
4.5
5
Drain to Source Voltage VDS (V)
Power Gain, Power Added Efficiency
vs. Input Power
40
80
PAE
30
60
20
40
PG
10
20
VDS = 3.6 V
f = 520 MHz
IDQ = 200 mA
0
0
0
5
10 15 20 25
Input Power Pin (dBm)
Input Return Loss vs. Frequency
0
VDS = 3.6 V
IDQ = 200 mA
-5 Pin = 25 dBm
-10
-15
-20
450 470 490 510 530 550
Frequency f (MHz)
Power Gain, Power Added Efficiency
vs. Idling Current
20
80
15
70
PG
10
60
PAE
5
VDS = 3.6 V 50
f = 520 MHz
Pin = 25 dBm
0
40
0
0.2 0.4 0.6 0.8
1
Idling Current IDQ (A)
REJ03G0583-0301 Rev.3.01 Nov 21, 2007
Page 7 of 17

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