RT3K33M 데이터 시트보기 (PDF) - Isahaya Electronics

부품명

상세내역

제조사

RT3K33M

Composite Transistor For high speed switching Silicon N-channel MOSFET

Isahaya Electronics 

RT3K33M

Composite Transistor

For high speed switching

Silicon N-channel MOSFET

DESCRIPTION

RT3K33M is a composite transistor built with two OUTLINE DRAWING

INK0003AX chips in SC-88 package.

2.1

FEATURE

・Input impedance is high, and not necessary to consider a drive

electric current.

1.25

①

⑥

・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V

②

⑤

・Low on Resistance. Ron=0.9Ω(TYP)

・High speed switching.

③

④

・Small package for easy mounting.

Unit：mm

APPLICATION

high speed switching , Analog switching

⑥

⑤

④

Tr.1

Tr.2

①

②

③

TERMINAL

CONNECTOR

①：SOURCE1

②：GATE1

③：DRAIN2

④：SOURCE2

⑤：GATE2

⑥:DRAIN1

JEITA：SC-88

MAXIMUM RATING (Ta=25℃)

SYMBOL

VDSS

VGSS

ID

PD

Tch

Tstg

PARAMETER

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation（Ta=25℃）

Channel temperature

Range of Storage temperature

RATING

20

±8

200

150

＋125

-55～＋125

UNIT

V

V

mA

mW

℃

℃

MARKING

654

.Ｋ. ３３

１23

ISAHAYA ELECTRONICS CORPORATION

Share Link: