SF25JZ51 데이터 시트보기 (PDF) - Toshiba
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SF25JZ51 Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SF25GZ51, SF25JZ51
CHARACTERISTIC
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Holding Current
Critical Rate of Rise of Off−State Voltage
Thermal Resistance
SYMBOL
TEST CONDITION
IDRM
IRRM
VTM
VGT
IGT
IH
dv / dt
Rth (j−c)
VDRM = VRRM = Rated
ITM = 80 A
VD = 6 V, RL = 10 Ω
VD = 6 V, ITM = 500 mA
VDRM = Rated, Tc = 125°C
Exponential Rise
Junction to Case
MIN. TYP. MAX. UNIT
―
―
20
µA
―
―
1.5
V
―
―
1.5
V
―
―
20
mA
―
― 100 mA
―
50
― V / µs
―
―
1.3 °C / W
MARKING
F25GZ51
Characteristics
indicator
Part No. (or abbreviation code) *1
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No.
(or abbreviation code)
*1
F25GZ51
F25JZ51
Part No.
SF25GZ51
SF25JZ51
2
2004-07-06
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