SM16JZ47A 데이터 시트보기 (PDF) - Toshiba
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SM16JZ47A Datasheet PDF : 5 Pages
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SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
II
Gate Trigger Voltage
III
IV
I
SM16GZ47
II
SM16JZ47
III
Gate Trigger
IV
Current
I
SM16GZ47A
II
SM16JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off−State Voltage
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
Critical Rate of Rise of
Off−State Voltage at
Commutation
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (j−c)
VDRM = Rated
T2 (+) , Gate (+)
VD = 12V,
RL = 20Ω
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
VD = 12V,
RL = 20Ω
T2 (−) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
ITM = 25A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
30
―
―
30
―
―
30
―
―
―
mA
―
―
20
―
―
20
―
―
20
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
2.5 °C / W
―
300
―
V / µs
―
200
―
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = − 8.7A / ms
10
―
―
V / µs
4
―
―
MARKING
* NUMBER
SYMBOL
*1
Toshiba Product Mark
SM16GZ47, SM16GZ47A
*2
TYPE
SM16JZ47, SM16JZ47A
*3
SM16GZ47A, SM16JZ47A
MARK
M16GZ47
M16JZ47
A
Example
*4
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-13
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