ST1900C 데이터 시트보기 (PDF) - International Rectifier
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ST1900C Datasheet PDF : 7 Pages
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ST1900C..R Series
Blocking
Parameter
dv/dt Maximum linear rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
ST1900C..R
500
250
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
mA TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
PGM Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
VGM Max. peak positive gate voltage
-VGM Max. peak negative gate voltage
IGT Maximum DC gate current
required to trigger
VGT Maximum gate voltage required
to trigger
VGD DC gate voltage not to trigger
ST1900C..R
150
10
30
30
0.25
Units Conditions
W
tp = 100µs
A Anode positive with respect to cathode
V Anode positive with respect to cathode
V Anode negative with respect to cathode
400
mA TC = 25°C, VDRM = 5V
4
0.25
V
TC = 25°C, VDRM = 5V
23
V TC = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
ST1900C..R Units Conditions
TJ max. Max. operating temperature
Tstg Max. storage temperature range
RthJ-C Thermal resistance, junction
to case
125
-55 to 125
0.019
0.0095
On-state (conducting)
°C
DC operation single side cooled
K/W
DC operation double side cooled
Rth(C-h) Thermal resistance, case
to heatsink
F
Mounting force ± 10%
wt Approximate weight
0.004
0.002
43000
(4400)
1600
Single side cooled Clamping force 43KN with
K/W Double side cooled mounting compound
N
(Kg)
g
Case style
(R-PUK)
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
Double side
Units Conditions
180°
120°
60°
0.0010
0.0017
0.0044
0.0010
0.0017
0.0044
K/W
TJ = TJ max.
D-4093333
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