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VS-ST230C 데이터 시트보기 (PDF) - Vishay Semiconductors

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VS-ST230C Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
www.vishay.com
VS-ST230C Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, tp 5 ms
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = TJ maximum
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
VALUES
TYP. MAX.
10.0
2.0
3.0
20
5.0
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
10
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TJ
TStg
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 125
°C
-40 to 150
0.17
0.08
K/W
0.033
0.017
4900
N
(500)
(kg)
50
g
A-PUK (TO-200AB)
RthJC CONDUCTION
CONDUCTION ANGLE
180°
120°
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.015
0.017
0.018
0.019
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.011
0.011
0.019
0.019
TEST CONDITIONS
UNITS
90°
0.024
0.024
0.026
0.026
TJ = TJ maximum
K/W
60°
0.035
0.035
0.036
0.036
30°
0.060
0.060
0.060
0.061
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 27-Sep-17
3
Document Number: 94398
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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