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STQ2NF06L

N-CHANNEL 60V - 0.1 Ω- 2A TO-92 STripFET™ II POWER MOSFET

STMicroelectronics 

STQ2NF06L

N-CHANNEL 60V - 0.1 Ω - 2A TO-92

STripFET™ II POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STQ2NF06L

60 V

<0.12 Ω

2A

s TYPICAL RDS(on) = 0.1 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s AVALANCHE RUGGED TECHNOLOGY

s LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s DC MOTOR CONTROL (DISK DRIVES, etc.)

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

TO-92

TO-92

(Ammopack)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(•) Drain Current (pulsed)

Ptot(1) Total Dissipation at TC = 25°C

Derating Factor

dv/dt (2) Peak Diode Recovery voltage slope

EAS (3) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(1) Related to Rthj -l

October 2003

.

Value

Unit

60

V

60

V

± 16

V

2

A

1.2

A

8

A

3

W

8

W/°C

6

V/ns

200

mJ

°C

-55 to 150

°C

(2) ISD ≤2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(3) Starting Tj = 25 oC, ID = 2A, VDD = 30V

1/9

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